FGH25T120SMD Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – 1200 V, 25 A Field Stop Trench IGBT

Electrical Characteristics of the DIODE T_C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
V_FM
Diode Forward Voltage
I_F = 25 A, T_C = 25^oC
-
I_F = 25 A, T_C = 175^oC
-
t_rr
Diode Reverse Recovery Time
V_R = 600 V, I_F = 25 A,
-
I_rr
Diode Peak Reverse Recovery Current ^{diF/dt = 200 A/us, TC = 25oC}
-
Q_rr
Diode Reverse Recovery Charge
-
E_rec
Reverse Recovery Energy
t_rr
Diode Reverse Recovery Time
V_R = 600 V, I_F = 25 A,
-
di_F/dt = 200 A/us, T_C = 175^oC
-
I_rr
Diode Peak Reverse Recovery Current
-
Q_rr
Diode Reverse Recovery Charge
-
Typ.
2.8
2.1
60
6.6
197
330
325
13
2113
Max.
3.7
-
-
-
-
-
-
-
-
Unit
V
V
ns
A
nC
uJ
ns
A
nC
©2013 Fairchild Semiconductor Corporation
3
FGH25T120SMD Rev. C2
www.fairchildsemi.com