FGH25T120SMD Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – 1200 V, 25 A Field Stop Trench IGBT

Package Marking and Ordering Information
Device Marking
Device
Package
FGH25T120SMD FGH25T120SMD_F155 TO-247G03
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics of the IGBT T_C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BV_CES
I_CES
I_GES
Collector to Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
V_GE = 0 V, I_C = 250 uA
V_CE = V_CES, V_GE = 0 V
V_GE = V_GES, V_CE = 0 V
On Characteristics
V_GE(th)
G-E Threshold Voltage
V_CE(sat) Collector to Emitter Saturation Voltage
I_C = 25 mA, V_CE = V_GE
I_C = 25 A, V_GE = 15 V
T_C = 25^oC
I_C = 25 A, V_GE = 15 V,
T_C = 175^oC
Dynamic Characteristics
C_ies
C_oes
C_res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_CE = 30 V_, V_GE = 0 V,
f = 1MHz
Switching Characteristics
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
Q_g
Q_ge
Q_gc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
V_CC = 600 V, I_C = 25 A,
R_G = 23 Ω, V_GE = 15 V,
Inductive Load, T_C = 25^oC
V_CC = 600 V, I_C = 25 A,
R_G = 23 Ω, V_GE = 15 V,
Inductive Load, T_C = 175^oC
V_CE = 600 V, I_C = 25 A,
V_GE = 15 V
1200
-
-
V
-
-
250
uA
-
-
±400
nA
4.9
6.2
7.5
V
-
1.8
2.4
V
-
1.9
-
V
-
2800
-
pF
-
105
-
pF
-
60
-
pF
-
40
-
ns
-
45
-
ns
-
490
-
ns
-
12
-
ns
-
1.74
-
mJ
-
0.56
-
mJ
-
2.30
-
mJ
-
40
-
ns
-
48
-
ns
-
520
-
ns
-
64
-
ns
-
2.94
-
mJ
-
1.09
-
mJ
-
4.03
-
mJ
-
225
-
nC
-
20
-
nC
-
128
-
nC
©2013 Fairchild Semiconductor Corporation
2
FGH25T120SMD Rev. C2
www.fairchildsemi.com