FGH25T120SMD Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 1200 V, 25 A Field Stop Trench IGBT

August 2014
FGH25T120SMD
1200 V, 25 A Field Stop Trench IGBT
Features
• FS Trench Technology, Positive Temperature Coefficient
• High Speed Switching
• Low Saturation Voltage: V_CE(sat) =1.8 V @ I_C = 25 A
• 100% of The Parts Tested for I_LM(1)
• High Input Impedance
• RoHS Compliant
Applications
• Solar Inverter, Welder, UPS & PFC Applications.
General Description
Using innovative field stop trench IGBT technology, Fairchild’s
new series of field stop trench IGBTs offer the optimum
performance for hard switching application such as solar
inverter, UPS, welder and PFC applications.
E
C
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
Description
V_CES
V_GES
I_C
I_LM (1)
I_CM (2)
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
Clamped Inductive Load Current
Pulsed Collector Current
@ T_C = 25^oC
@ T_C = 100^oC
@ T_C = 25^oC
I_F
Diode Continuous Forward Current
@ T_C = 25^oC
Diode Continuous Forward Current
@ T_C = 100^oC
I_FM
Diode Maximum Forward Current
P_D
Maximum Power Dissipation
Maximum Power Dissipation
@ T_C = 25^oC
@ T_C = 100^oC
T_J
Operating Junction Temperature
T_stg
Storage Temperature Range
T_L
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
R_θJC(IGBT)
R_θJC(Diode)
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
1. Vcc = 600 V, V_GE = 15 V, I_C = 100 A, R_G = 23 ⒋ Inductive Load
2. Limited by Tjmax
©2013 Fairchild Semiconductor Corporation
1
FGH25T120SMD Rev. C2
G
E
Ratings
1200
±25
±30
50
25
100
100
50
25
200
428
214
-55 to +175
-55 to +175
300
Typ.
--
--
--
Max.
0.35
1.4
40
Unit
V
V
V
A
A
A
A
A
A
A
W
W
o_C
o_C
o_C
Unit
o_C/W
o_C/W
o_C/W
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