FGH25T120SMD Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – 1200 V, 25 A Field Stop Trench IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
100
T_C = 25^oC
20V
15V
80
12V
60
40
10V
20
0
0.0
V_GE = 8V
2.0
4.0
6.0
8.0
10.0
Collector-Emitter Voltage, V_CE [V]
Figure 3. Typical Saturation Voltage
Characteristics
100
Common Emitter
V_GE = 15V
80 _{TC = 25}^o_C
T_C = 175^oC
60
40
20
0
0.0
1.0
2.0
3.0
4.0
5.0
Collector-Emitter Voltage, V_CE [V]
Figure 5. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 25^oC
15
25A
50A
10
I_C=15A
5
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 2. Typical Output Characteristics
100
T_C = 175^oC
20V
15V
80
12V
60
40
10V
20
0
0.0
V_GE = 8V
2.0
4.0
6.0
8.0
10.0
Collector-Emitter Voltage, V_CE [V]
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
3.5
Common Emitter
V_GE = 15 V
3.0
50 A
2.5
2.0
25 A
I_C = 15 A
1.5
1.0
25
50 75 100 125 150 175
Case Temperature, T_C [^oC]
Figure 6. Saturation Voltage vs. V_GE
20
16
25A
12
I_C=15A
8
Common Emitter
T_C = 175^oC
50A
4
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
©2013 Fairchild Semiconductor Corporation
4
FGH25T120SMD Rev. C2
www.fairchildsemi.com