FGH25T120SMD Datasheet, PDF (5/9 Pages) Fairchild Semiconductor – 1200 V, 25 A Field Stop Trench IGBT

Typical Performance Characteristics
Figure 7. Capacitance Characteristics
10000
C_ies
1000
C_oes
100
Common Emitter
C_res
V_GE = 0V, f = 1MHz
T_C = 25^oC
20
1
10
30
Collector-Emitter Voltage, V_CE [V]
Figure 9. Turn-on Characteristics vs.
Gate Resistance
300
Common Emitter
V_CC = 600V, V_GE = 15V
I_C = 25A
T_C = 25^oC
100 _{TC = 175oC}
t_r
t_d(on)
10
0
14
28
42
56
70
Gate Resistance, R_G [Ω ]
Figure 11. Swithcing Loss vs.
Gate Resistance
100
Common Emitter
V_CC = 600V, V_GE = 15V
I_C = 25A
10
T_C = 25^oC
T_C = 175^oC
E_on
1
E_off
0.1
0
14
28
42
56
70
Gate Resistance, R_G [Ω ]
Figure 8. Gate Charge Characteristics
15
Common Emitter
T_C = 25^oC
12
400V
V_CC = 200V
600V
9
6
3
0
0
50
100
150
200
250
Gate Charge, Q_g [nC]
Figure 10. Turn-off Characteristics vs.
Gate Resistance
10000
1000
t_d(off)
100
10
1
0.1
0
t_f
Common Emitter
V_CC = 600V, V_GE = 15V
I_C = 25A
T_C = 25^oC
T_C = 175^oC
14
28
42
56
70
Gate Resistance, R_G [Ω ]
Figure 12. Turn-on Characteristics vs.
Collector Current
300
Common Emitter
V_GE = 15V, R_G = 23Ω
T_C = 25^oC
100 ^{TC = 175oC}
t_r
t_d(on)
10
0
10
20
30
40
50
Collector Current, I_C [A]
©2013 Fairchild Semiconductor Corporation
5
FGH25T120SMD Rev. C2
www.fairchildsemi.com