FGH25N120FTDS Datasheet, PDF (7/9 Pages) Fairchild Semiconductor – 1200V, 25A Field Stop Trench IGBT

Typical Performance Characteristics
Figure 19. Forward Characteristics
30
Figure 20. Reverse Recovery Current
7
10
T_J = 125^oC
1
T_J = 25^oC
0.1
0
T_C = 25^oC
T_C = 125^oC
1
2
3
Forward Voltage, V_F [V]
Figure 21. Stored Charge
2.0
6
200A/µs
5
4
di/dt = 100A/µs
3
2
10
20
30
40
50
Forward Current, I_F [A]
Figure 22. Reverse Recovery Time
1200
1.5
200A/µs
1.0
di/dt = 100A/µs
0.5
1000
800
600
di/dt = 100A/µs
200A/µs
0.0
10
20
30
40
50
Forward Current, I_F [A]
400
10
20
30
40
Forward Current, I_F [A]
Figure 23. Transient Thermal Impedance of IGBT
1
0.1 ^0.5
0.2
0.01
0.1
0.05
0.02
0.01
single pulse
0.001
1E-5
0.0001
P_DM
t₁
t₂
Duty Factor, D = t1/t2
Peak T_j = Pdm x Zthjc + T_C
0.001
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
FGH25N120FTDS Rev. A
7
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