FGH25N120FTDS Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 1200V, 25A Field Stop Trench IGBT

June 2009
FGH25N120FTDS
tm
1200V, 25A Field Stop Trench IGBT
Features
• High speed switching
• Low saturation voltage: V_CE(sat) = 1.60V @ I_C = 25A
• High input impedance
• RoHS compliant
Application
• UPS, Solar Inverter, Welding Machine, General Purpose Inverters
General Description
Using advanced field stop trench technology, Fairchild’s 1200V
trench IGBTs offer superior conduction and switching perfor-
mances, and easy parallel operation with exceptional avalanche
ruggedness. This device is designed for General Inverter
switching applications.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
I_F
I_FM
P_D
T_J
T_stg
T_L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ T_C = 25^oC
@ T_C = 100^oC
Diode Continuous Forward Current
@ T_C = 100^oC
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ T_C = 25^oC
@ T_C = 100^oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R_θJC(IGBT)
R_θJC(Diode)
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2009 Fairchild Semiconductor Corporation
1
FGH25N120FTDS Rev. A
C
G
E
Ratings
1200
± 25
50
25
75
25
75
313
125
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
A
W
W
o_C
o_C
o_C
Typ.
-
-
-
Max.
0.4
1.25
40
Units
o_C/W
o_C/W
o_C/W
www.fairchildsemi.com