FGH25N120FTDS Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – 1200V, 25A Field Stop Trench IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
180
T_C = 25^oC
20V
150
17V
15V
12V
120
90
10V
60
9V
30
V_GE = 8V
0
0
2
4
6
8
Collector-Emitter Voltage, V_CE [V]
Figure 3. Typical Saturation Voltage
Characteristics
120
Common Emitter
100
V_GE = 15V
T_C = 25^oC
80 ^{TC = 125oC}
60
40
20
0
0
2
4
6
Collector-Emitter Voltage, V_CE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
3.0
Common Emitter
V_GE = 15V
50A
2.5
2.0
25A
1.5
I_C = 10A
1.0
25
50
75
100
125
Collector-EmitterCase Temperature, T_C [^oC]
Figure 2. Typical Output Characteristics
180
T_C = 125^oC
150
120
20V
17V
15V
12V
90
10V
60
9V
30
V_GE = 8V
0
0
2
4
6
8
Collector-Emitter Voltage, V_CE [V]
Figure 4. Transfer Characteristics
120
Common Emitter
V_CE = 20V
100 _{TC = 25}o_C
T_C = 125^oC
80
60
40
20
0
0
5
10
15
Gate-Emitter Voltage,V_GE [V]
Figure 6. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 25^oC
16
12
8
50A
4
25A
I_C = 10A
0
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
FGH25N120FTDS Rev. A
4
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