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FGH25N120FTDS Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – 1200V, 25A Field Stop Trench IGBT
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Package Marking and Ordering Information
Device Marking
Device
FGH25N120FTDS FGH25N120FTDS
Package
TO-3PN
Eco Status
RoHS
Packaging
Type
Tube
Qty per Tube
30ea
For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
ICES
IGES
Collector to Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250µA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 25mA, VCE = VGE
IC = 25A, VGE = 15V
IC = 25A, VGE = 15V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 600V, IC = 25A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 600V, IC = 25A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125oC
VCE = 600V, IC = 25A,
VGE = 15V
1200
-
-
V
-
-
1
mA
-
-
±250
nA
3.5
6
7.5
V
-
1.6
2
V
-
1.92
-
V
-
4090
-
pF
-
135
-
pF
-
75
-
pF
-
26
35
ns
-
41
53
ns
-
151
196
ns
-
102
132
ns
-
1.42
1.84
mJ
-
1.16
1.50
mJ
-
2.58
3.34
mJ
-
22
-
ns
-
41
-
ns
-
163
-
ns
-
136
-
ns
-
2.04
-
mJ
-
1.58
-
mJ
-
3.62
-
mJ
-
169
225
nC
-
33
44
nC
-
78
104
nC
FGH25N120FTDS Rev. A
2
www.fairchildsemi.com
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