FGH25N120FTDS Datasheet, PDF (5/9 Pages) Fairchild Semiconductor – 1200V, 25A Field Stop Trench IGBT

Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 125^oC
16
12
8
50A
4
25A
I_C = 10A
0
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 9. Capacitance Characteristics
8000
6000
Common Emitter
V_GE = 0V, f = 1MHz
T_C = 25^oC
C_ies
4000
2000
C_oes
C_res
0
1
10
30
Collector-Emitter Voltage, V_CE [V]
Figure 11. SOA Characteristics
Gate Resistance
200
100
10µs
100µs
10
1ms
10 ms
DC
1
*Notes:
0.1
1. T_C = 25^oC
2. T_J = 150^oC
3. Single Pulse
0.01
1
10
100
1000 3000
Collector-Emitter Voltage, V_CE [V]
Figure 8. Load Current vs. Frequency
140
V_CC = 600V
load Current : peak of square wave
120
100
80
60
40
Duty cycle : 50%
20
T = 100^oC
C
Powe Dissipation = 125W
0
10⁰
10¹
10²
10³
Frequency [kHz]
Figure 10. Gate Charge Characteristics
15
Common Emitter
T_C = 25^oC
12
V_CC = 200V
9
600V
400V
6
3
0
0
40
80
120
160
200
Gate Charge, Q_g [nC]
Figure 12. Turn-on Characteristics vs.
Gate Resistance
200
100
t_r
10
0
t_d(on)
Common Emitter
V_CC = 600V, V_GE = 15V
I_C = 25A
T_C = 25^oC
T_C = 125^oC
10
20
30
40
50
Gate Resistance, R_G [Ω]
FGH25N120FTDS Rev. A
5
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