FGH25N120FTDS Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – 1200V, 25A Field Stop Trench IGBT

Electrical Characteristics of the Diode T_C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
V_FM
Diode Forward Voltage
I_F = 25A
T_C = 25^oC
T_C = 125^oC
t_rr
I_rr
Diode Reverse Recovery Time
I_ES = 25A,
Diode Peak Reverse Recovery Current ^{di/dt = 200A/µs}
T_C = 25^oC
T_C = 125^oC
T_C = 25^oC
T_C = 125^oC
Q_rr
Diode Reverse Recovery Charge
T_C = 25^oC
T_C = 125^oC
Min.
-
-
-
-
-
-
-
-
Typ.
2.5
2.3
411
496
5.2
6.9
1.1
1.7
Max
3.5
-
535
-
6.8
-
1.82
-
Units
V
ns
A
µC
FGH25N120FTDS Rev. A
3
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