FGH25N120FTDS Datasheet, PDF (6/9 Pages) Fairchild Semiconductor – 1200V, 25A Field Stop Trench IGBT

Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
1000
t_d(off)
100
t_f
Common Emitter
V_CC = 600V, V_GE = 15V
I_C = 25A
T_C = 25^oC
T_C = 125^oC
10
0
10
20
30
40
50
Gate Resistance, R_G [Ω]
Figure 15. Turn-off Characteristics vs.
Collector Current
1000
Common Emitter
V_GE = 15V, R_G = 10Ω
T_C = 25^oC
T_C = 125^oC
t_f
100
t_d(off)
Figure 14. Turn-on Characteristics vs.
Collector Current
100
Common Emitter
V_GE = 15V, R_G = 10Ω
T_C = 25^oC
T_C = 125^oC
t_r
t_d(on)
10
0
10
20
30
40
50
Collector Current, I_C [A]
Figure 16. Switching Loss vs. Gate Resistance
10
Common Emitter
V_CC = 600V, V_GE = 15V
I_C = 25A
T_C = 25^oC
T_C = 125^oC
E_on
20
0
10
20
30
40
50
Collector Current, I_C [A]
Figure 17. Switching Loss vs. Collector Current
E_off
1
0
10
20
30
40
50
Gate Resistance, R_G [Ω]
Figure 18. Turn off Switing SOA Characteristics
10
100
Common Emitter
V_GE = 15V, R_G = 10Ω
T_C = 25^oC
E_on
T_C = 125^oC
1
E_off
10
0.1
0
10
20
30
40
50
Collector Current, I_C [A]
FGH25N120FTDS Rev. A
6
Safe Operating Area
V_GE = 15V, T_C = 125^oC
1
1
10
100
1000 3000
Collector-Emitter Voltage, V_CE [V]
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