ES29DL320 Datasheet, PDF (53/59 Pages) Excel Semiconductor Inc. – 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

ADVANCED INFORMATION
EE SS II
Excel Semiconductor inc.
Table 20. ERASE AND PROGRAMMING PERFORMANCE
Parameter
Sector Erase Time
Chip Erase Time
Byte Program Time
Accelerated Byte/Word Program Time
Word Program Time
Byte Mode
Chip Program Time (Note 3)
Word Mode
Typ (Note 1)
0.7
50
6
4
8
25
17
Max (Note 2)
15
150
120
210
76
50
Unit
sec
sec
us
us
us
sec
Comments
Excludes 00h programming prior to
erasure (Note 4)
Exclude system level overhead (Note 5)
Notes:
1. Typical program and erase times assume the following conditions: 25^oC, 3.0V Vcc, 10,000 cycles. Additionally, programming
typicals assume checkerboard pattern.
2. Under worst case conditions of 90^oC, Vcc = 2.7V, 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two-or-four-bus-cycle sequence for the program command. See
Table 9 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 100,000 cycles.
Table 21. LATCHUP CHARACTERISTICS
Description
Input voltage with respect to Vss on all pins except I/O pins (including A9, OE#, and RESET#)
Input voltage with respect to Vss on all I/O pins
Vcc Current
Min
- 1.0V
- 1.0V
- 100mA
Note: Includes all pins except Vcc. Test conditions: Vcc = 3.0 V, one pin at a time
Max
12.5V
Vcc + 1.0V
+100mA
Table 22. TSOP AND BGA PACKAGE CAPACITANCE
Parameter Symbol
Parameter Description
C_IN
Input Capacitance
C_OUT
Output Capacitance
C_IN2
Control Pin Capacitance
V_IN = 0
V_OUT = 0
V_IN = 0
Test Setup
TSOP
FBGA
TSOP
FBGA
TSOP
FBGA
Notes:
1. Sampled, not 100% tested
2. Test conditions TA = 25^oC, f=1.0MHz.
Typ
Max Unit
6
7.5 pF
4.2
5.0 pF
8.5
12 pF
5.4
6.5 pF
7.5
9
pF
3.9
4.7 pF
Table 23. DATA RETENTION
Parameter Description
Minimum Pattern Data Retention Time
ES29DL320
Test conditions
150^oC
125^oC
53
Min
Unit
10
Years
20
Years
Rev. 0E May 25, 2006