ES29DL320 Datasheet, PDF (28/59 Pages) Excel Semiconductor Inc. – 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

ADVANCED INFORMATION
Read and Program during Erase-Suspend-
Read Mode
After the erase operation has been suspended, the
bank enters the erase-suspend-read mode. The
system can read data from or program data to any
sector not selected for erasure. (The device “erase
suspends” all sectors selected for erasure.) Reading
at any address within erase-suspended sectors pro-
duces status information on DQ7-DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to deter-
mine if a sector is actively erasing or is erase-sus-
pended. Refer to the Write Operation Status section
for information on these status bits (Table 10).
After an erase-suspended program operation is
complete, the bank returns to the erase-suspend-
read mode. The system can determine the status for
the program operation using the DQ7 or DQ6 status
bits, just as in the standard Byte Program operation.
Refer to the Write Operation Status section for more
information.
Autoselect during Erase-Suspend- Read
Mode
In the erase-suspend-read mode, the system can
also issue the autoselected command sequence.
Refer to the Autoselect Mode and Autoselect Com-
mand Sequence section for details (Table 9).
Erase Resume Command
To resume the sector erase operation, the system
must write the Erase Resume command. The bank
address of the erase-suspended bank is required
when writing this command. Further writes of the
Resume command are ignored. Another Erase Sus-
pend command can be written after the chip has
resumed erasing.
EE SS II
Excel Semiconductor inc.
ES29DL320
28
Rev. 0E May 25, 2006