ES29DL320 Datasheet, PDF (19/59 Pages) Excel Semiconductor Inc. – 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

ADVANCED INFORMATION
EE SS II
Excel Semiconductor inc.
Common Flash Memory
Interface (CFI)
CFI is supported in the ES29DL320 device. The
Common Flash Interface (CFI) specification out-
lines device and host system software interrogation
handshake, which allows specific vendor-specified
software algorithms to be used for entire families of
devices. Software support can then be device-inde-
pendent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device
families. Flash vendors can standardize their exist-
ing interfaces for long-term compatibility.
This device enters the CFI Query mode when the
system writes the CFI query command, 98h, to
address 55h in word mode (or address AAh in byte
mode), any time the device is ready to read array
data. The system can read CFI information at the
addresses given in Tables 5-8. To terminate reading
CFI data, the system must write the reset com-
mand.The CFI query command can be written to the
system when the device is in the autoselect mode
or the erase-suspend-read mode. The device
enters the CFI query mode, and the system can read
CFI data at the addresses given in Tables 5-8.
When the reset command is written, the device
returns respectively to the read mode or erase-sus-
pend-read mode.
Table 5. CFI Query Identification String
Addresses
(Word Mode)
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
1Ah
Addresses
(Byte Mode)
20h
22h
24h
26h
28h
2Ah
2Ch
2Eh
30h
32h
34h
Data
0051h
0052h
0059h
0002h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
Description
Query Unique ASCII string “QRY”
Primary OEM Command Set
Address for Primary Extended Table
Alternate OEM Command Set(00h = none exists)
Address for Alternate OEM Extended Table (00h = none exists)
Table 6. System Interface String
Addresses
(Word Mode)
1Bh
Addresses
(Byte Mode)
36h
1Ch
38h
1Dh
3Ah
1Eh
3Ch
1Fh
3Eh
20h
40h
21h
42h
22h
44h
23h
46h
24h
48h
25h
4Ah
26h
4Ch
Data
Description
0027h
0036h
0000h
0000h
0004h
0000h
000Ah
0000h
0005h
0000h
0004h
0000h
Vcc Min. (write/erase)
D7-D4: volt, D3-D0: 100 millivolt
Vcc Max. (write/erase)
D7-D4: volt, D3-D0: 100 millivolt
Vpp Min. voltage (00h = no Vpp pin present)
Vpp Max. voltage (00h = no Vpp pin present)
Typical timeout per single byte/word write 2^N us
Typical timeout for Min. size buffer write 2^N us (00h = not supported)
Typical timeout per individual block erase 2^N ms
Typical timeout for full chip erase 2^N ms (00h = not supported)
Max. timeout for byte/word write 2^N times typical
Max. timeout for buffer write 2^N times typical
Max. timeout per individual block erase 2^N times typical
Max. timeout for full chip erase 2^N times typical (00h = not supported)
ES29DL320
19
Rev. 0E May 25, 2006