ES29DL320 Datasheet, PDF (48/59 Pages) Excel Semiconductor Inc. – 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

ADVANCED INFORMATION
EE SS II
Excel Semiconductor inc.
AC CHARACTERISTICS
Table 18. Alternate CE# Controlled Erase and Program Operations
Parameter
JEDEC Std.
t_AVAV
t_WC
t_AVWL
t_AS
t_ELAX
t_AH
t_DVEH
t_DS
t_EHDX
t_DH
t_GHEL
t_GHEL
t_WLEL
t_WS
t_EHWH
t_WH
t_ELEH
t_CP
t_ELEL
t_CPH
t_WHWH1
t_WHWH1
t_WHWH1
t_WHWH2
t_WHWH1
t_WHWH2
Description
Write Cycle Time( Note 1)
Min
Address Setup Time
Min
Address Hold Time
Min
Data Setup Time
Min
Data Hold Time
Min
Read Recovery Time Before Write (OE# High to WE# Low) Min
WE# Setup Time
Min
WE# Hold Time
Min
CE# Pulse Width
Min
CE# Pulse Width High
Min
Programming Operation (Note 2)
Byte
Typ
Word
Typ
Accelerated Programming Operation, Word or Byte (Note 2) Typ
Sector Erase Operation (Note 2)
Typ
Notes :
1. Not 100% tested
2. See the “Erase And Programming Performance” section for more information.
70 90
70
90
0
45
45
35
45
0
0
0
0
30
35
30
6
8
4
0.7
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
us
sec
ES29DL320
48
Rev. 0E May 25, 2006