ES29LV160E Datasheet, PDF (43/53 Pages) Excel Semiconductor Inc. – 16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory

EE SS II
Excel Semiconductor inc.
AC CHARACTERISTICS
Table 18. Alternate CE# Controlled Erase and Program Operations
Parameter
JEDEC Std.
t_AVAV
t_WC
t_AVWL
t_AS
t_ELAX
t_AH
t_DVEH
t_DS
t_EHDX
t_DH
t_GHEL
t_GHEL
t_WLEL
t_WS
t_EHWH
t_WH
t_ELEH
t_CP
t_ELEL
t_CPH
t_WHWH1
t_WHWH2
t_WHWH1
t_WHWH2
Description
Write Cycle Time( Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Read Recovery Time Before Write (OE# High to WE# Low)
WE# Setup Time
WE# Hold Time
CE# Pulse Width
CE# Pulse Width High
Programming Operation (Note 2)
Byte
Word
Sector Erase Operation (Note 2)
70 90
Min
70
90
Min
0
Min
45
45
Min
35
45
Min
0
Min
0
Min
0
Min
0
Min
35
35
Min
30
Typ
6
Typ
8
Typ
0.7
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
sec
Notes :
1. Not 100% tested
2. See the “Erase And Programming Performance” section for more information.
ES29LV160E
43
Rev. 0B January 5 , 2006