ES29LV160E Datasheet, PDF (16/53 Pages) Excel Semiconductor Inc. – 16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory

EE SS II
Excel Semiconductor inc.
Table 7. Device Geometry Definition
Addresses
(Word Mode)
27h
28h
29h
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
3Ah
3Bh
3Ch
Addresses
(Byte Mode)
4Eh
50h
52h
54h
56h
58h
5Ah
5Ch
5Eh
60h
62h
64h
66h
68h
6Ah
6Ch
6Eh
70h
72h
74h
76h
78h
Data
Description
0015h
0002h
0000h
0000h
0000h
0004h
0000h
0000h
0040h
0000h
0001h
0000h
0020h
0000h
0000h
0000h
0080h
0000h
001Eh
0000h
0000h
0001h
Device Size = 2^N byte
Flash Device Interface description
02 = x8, x16 Asynchronous
Max. number of bytes multi-byte write = 2^N
(00h = not supported)
Number of Erase Block Regions within device
Erase Block Region 1 Information
Number of identical size erase block = 0000h+1 = 1
Erase Block Region 1 Information
Block size in Region 1 = 0040h * 256 byte = 16 Kbyte
Erase Block Region 2 Information
Number of identical size erase block = 0001h+1 =2
Erase Block Region 2 Information
Block size in Region 2 = 0020h * 256 byte = 8 Kbyte
Erase Block Region 3 Information
Number of identical size erase block = 0000h+1 =1
Erase Block Region 3 Information
Block size in Region 3 = 0080h * 256 byte = 32 Kbyte
Erase Block Region 4 Information
Number of identical size erase block = 001Eh+1 =31
Erase Block Region 4 Information
Block size in Region 4 = 0100h * 256 byte = 64 Kbyte
ES29LV160E
16
Rev. 0B January 5 , 2006