ES29LV160E Datasheet, PDF (35/53 Pages) Excel Semiconductor Inc. – 16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory

AC CHARACTERISTICS
Table 15. Word/Byte Configuration (BYTE#)
JEDEC
Parameter
Std.
t_ELFL/t_ELFH
t_FLQZ
t_FHQV
Description
CE# to BYTE# Switching Low or High
BYTE# Switching Low to Output HIGH Z
BYTE# Switching High to Output Active
CE#
EE SS II
Excel Semiconductor inc.
70 90
Max
5
Max
30
Min 70
90
Unit
ns
ns
ns
OE#
BYTE#
BYTE# Switching
Switching from
word to byte mode
DQ0-DQ14
DQ15/A-1
BYTE# Switching
Switching from
byte to word mode
BYTE#
DQ0-DQ14
DQ15/A-1
CE#
WE#
t_ELFL
t_ELFH
Data Output
(DQ0-DQ14)
Data Output
(DQ0-DQ7)
DQ15
Output
Address Input
t_FLQZ
Data Output
(DQ0-DQ7)
Address Input
t_FHQV
Data Output
(DQ0-DQ14)
DQ15
Output
Figure 18. BYTE# Timing for Read Operations
The falling edge of the last WE# signal
BYTE#
t_SET
(t_AS)
t_HOLD
(t_AH)
Note : Refer to the Erase/Program Operations table for t_AS and t_AH specifications.
Figure 19. BYTE# Timing for Write Operations
ES29LV160E
35
Rev. 0B January 5 , 2006