ES29LV160E Datasheet, PDF (36/53 Pages) Excel Semiconductor Inc. – 16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory

AC CHARACTERISTICS
EE SS II
Excel Semiconductor inc.
Table 16. Erase and Program Operations
Parameter
JEDEC Std.
t_AVAV
t_WC
t_AVWL
t_AS
t_ASO
t_WLAX
t_AH
t_AHT
t_DVWH
t_DS
t_WHDX
t_DH
t_OEPH
t_GHWL
t_GHWL
t_ELWL
t_CS
t_WHEH
t_CH
t_WLWH
t_WP
t_WHDL
t_WPH
t_SR/W
t_WHWH1
t_WHWH2
t_WHWH1
t_WHWH2
t_VCS
t_RB
t_BUSY
Description
Write Cycle Time (Note 1)
Address Setup Time
Address Setup Time to OE# low during toggle bit polling
Address Hold Time
Address Hold Time From CE# or OE# high during toggle bit polling
Data Setup Time
Data Hold Time
Output Enable High during toggle bit polling
Read Recovery Time Before Write (OE# High to WE# Low)
CE# Setup Time
CE# Hold Time
Write Pulse Width
Write Pulse Width High
Latency Between Read and Write Operations
Programming Operation (Note 2)
Byte
Word
Sector Erase Operation (Note 2)
Vcc Setup Time (Note 1)
Write Recovery Time from RY/BY#
Program/Erase Valid to RY/BY# Delay
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
70
Min 70
Min
Min
Min 45
Min
Min 35
Min
Min
Min
Min
Min
Min 35
Min
Min
Typ
Typ
Typ
Min
Min
Max
90
90
0
15
45
0
45
0
20
0
0
0
35
30
0
6
8
0.7
50
0
90
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
sec
us
ns
ns
ES29LV160E
36
Rev. 0B January 5 , 2006