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ES29LV160E Datasheet, PDF (10/53 Pages) Excel Semiconductor Inc. – 16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
EE SS II
Excel Semiconductor inc.
Table 1. ES29LV160 Device Bus Operations
Operation
CE# OE# WE# RESET# Addresses
(Note 1)
DQ0
~
DQ7
DQ8~DQ15
BYTE#
= VIH
BYTE#
= VIL
Read
Write
L
L
H
L
H
L
Standby
Vcc+
0.3V
X
X
Output Disable
Reset
L
H
H
X
X
X
Sector Protect
(Note 2)
L
H
L
Sector Unprotect
In-system
(Note 2)
L
H
L
Temporary Sector
Unprotect
X
X
X
H
H
Vcc+
0.3V
H
L
VID
VID
AIN
DOUT
AIN
(Note 3)
X
High-Z
X
X
SA,A6=L,
A1=H,A0=L
High-Z
High-Z
(Note 3)
SA,A6=H,
A1=H,A0=L
(Note 3)
VID
AIN
(Note 3)
DOUT
(Note 3)
High-Z
High-Z
High-Z
X
X
(Note 3)
DQ8~DQ14 = High-Z,
DQ15 = A-1
High-Z
X
X
High-Z
Sector protect
A9 High-Volt-
age Method
Sector unprotect
L
VID
L
L
VID
L
SA,A9=VID,
H
A6=L,
A1=H,A0=L
(Note 3)
SA,A9=VID,
H
A6=H,
A1=H,A0=L
(Note 3)
High-Z
Legend: L=Logic Low=VIL, H=Logic High=VIH, VID=11.5-12.5V, X=Don’t Care, SA=Sector Address, AIN=Address In, DIN=Data In,
DOUT=Data Out
Notes:
1. Addresses are A19:A0 in word mode (BYTE#=VIH) , A19:A-1 in byte mode (BYTE#=VIL).
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector Pro-
tection and Unprotection” section.
3. DIN or DOUT as required by command sequence, data polling, or sector protection algorithm.
Table 2. Autoselect Codes (A9 High-Voltage Method)
A19 A11
A8
A5
DQ8~DQ15
Description CE# OE# WE# to to A9 to A6 to A1 A0
A12 A10
A7
A2
BYTE# BYTE#
= VIH = VIL
DQ7~DQ0
ManufactureID:ESI L L H
X
X VID X
L
X
L
L
X
X
4Ah
Device ID:
ES29LV160
LLH
X
X
VID X
L
X
L
H
22h
X
C4h(T),49h(B)
Sector Protection
Verification
L
L
H SA
X
VID X
L
X
H
L
X
X
01h(protected)
00h(unprotected)
Legend: T= Top Boot Block, B = Bottom Boot Block, L=Logic Low=VIL, H=Logic High=VIH, SA=Sector Address, X = Don’t care
ES29LV160E
10
Rev. 0B January 5 , 2006