P0120002P Datasheet, PDF (8/13 Pages) Eudyna Devices Inc – 250mW GaAs Power FET (Pb-Free Type)

P0120002P
250mW GaAs Power FET (Pb-Free Type)
[Typical Performance]
KP022J Application Circuit
Vds=6V, Ids=100mA, Tc=25°C
Frequency characteristics were measured with Pout at 13dBm.
Technical Note
SUMITOMO ELECTRIC
Pout, G ain, IP3, Ids vs Pin
40
35
IP 3
30
25
Ids
20
Gain
15
Pout
10
5
-10 -8 -6 -4 -2 0 2
Pin (dBm)
115
110
105
100
95
90
85
80
4
IP3 vs Fre quency
36
Vds=6V
35
Vds=5V
34
33
Vds=4V
32
IM3, Im5 vs Pout
-20
-30
-40
IM3
-50
IM5
-60
-70
6 8 10 12 14 16 18 20
Pout (dBm)
IP3 vs Fre quency
36
Ids=100mA
34
32
Ids=80mA
30
Ids=60mA
28
31
2100 2120 2140 2160 2180
Fre quency (MHz)
26
2100 2120 2140 2160 2180
Fre quency (MHz)
Gain vs Fre quency
15.5
15.3
Vds=5V
Vds=6V
15.1
14.9
Vds=4V
Gain vs Fre quency
15.5
15.3
Ids=80mA
15.1
14.9 ^Ids=100mA
Ids=60mA
14.7
14.7
14.5
2100
2120 2140 2160
Fre quency (MHz)
2180
14.5
2100 2120 2140 2160 2180
Fre quency (MHz)
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: [phone] Fax: [phone] e-mail : [e-mail] Web Site: www.sei.co.jp/GaAsIC/
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