P0120002P Datasheet, PDF (7/13 Pages) Eudyna Devices Inc – 250mW GaAs Power FET (Pb-Free Type)

P0120002P
Technical Note
250mW GaAs Power FET (Pb-Free Type) SUMITOMO ELECTRIC
♦Application Circuit: 2110-2170MHz
C1
RF in (Rs=50Ω)
Z1
Z2
C2
Z3
Z4
L1
L2
L3
R1
C3
R2 C4
Z5
D.U.T
C5
Z6
Z7
L4
RF out (RL=50Ω)
C7
C6
Vg
Vd
RF in
KP022J
C1
L1
C5
L3
C2
L2 _R1
R2
L4
C4 _C6
C3
Vg
(-0.7∼-2V)
Vd
(+6V)
Ref. Des. Value Part Number
R1
82Ω
SUSUMU
R2
470Ω RR0816 series
C1
0.5pF
C2
0.75pF
C7 _{RF out}
C3
0.1µF
MURATA
C4
0.5pF _{GRM18 series}
C5 2200pF
C6
0.1µF
C7
0.75pF
L1
3.3nH
L2
3.3nH TOKO LL1608
L3
18nH
series
L4
18nH
20
S21
10
0
-10
-20
S12
-30
1.9
2
S22
S11
2.1
2.2
2.3
Frequency (GHz)
Ref.
Electrical length
Designator
@ 2.1GHz (deg)
Z1
6.8
Z2
11.34
Z3
4.08
Z4
13.61
Z5
8.62
Z6
6.38
Z7
38.56
All microstrip lines have a line impedance of 50Ω.
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: [phone] Fax: [phone] e-mail : [e-mail] Web Site: www.sei.co.jp/GaAsIC/
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