P0120002P Datasheet, PDF (2/13 Pages) Eudyna Devices Inc – 250mW GaAs Power FET (Pb-Free Type)

P0120002P
Technical Note
250mW GaAs Power FET (Pb-Free Type) SUMITOMO ELECTRIC
♦Typical Characteristics
Power Derating Curve
3
2
1
0
0
50
100 150 200
Tc (°C)
400
300
200
100
0
0
Transfer Curve
Vgs=0V
-0.5V
-1.0V
-1.5V
-2.0V
2
4
6
Vds (V)
♦S-parameters (Typical Data)
Tc=25°C, Vds=6V, Ids=100mA, Common Source, Zo=50Ω (Calibrated to device leads)
3.0
4.0
5.0
10.0
2.4GHz
-0.2
S11
-0.4
1.2GHz
2.4GHz
S22
1.2GHz
1.2GHz 6.0
135
S21
45
4.0
Scale for |S12|
-180
2.4GHz
2.0
S12
1.2GHz
0
2.4GHz
0
0
0.02 0.04 0.06
-45
-135
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: [phone] Fax: [phone] e-mail : [e-mail] Web Site: www.sei.co.jp/GaAsIC/
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