P0120002P Datasheet, PDF (4/13 Pages) Eudyna Devices Inc – 250mW GaAs Power FET (Pb-Free Type)

P0120002P
Technical Note
250mW GaAs Power FET (Pb-Free Type) SUMITOMO ELECTRIC
Ids=100mA
Ids=80mA
80
80
60
40
20
Pout
0
-20
IP3
Gain
ηadd
IM3
60
IP3
ηadd
40
Gain
20
0
IM3
-20
-40
-40
IM3/Pout
IM3/Pout
-60
-60
-80
-80
-100
-20 -15 -10 -5
0
5 10 15 20
-100
-20 -15 -10 -5
0
5 10 15 20
Pin (dBm)
Pin (dBm)
Device : P0120002P
Frequency: f1=2.1GHz, f2=2.101GHz
Bias: Vds=6V, Ids=100mA
Source Matching: Mag 0.71 Ang 131.9°
Load Matching: Mag 0.27 Ang 87.0°
Device : P0120002P
Frequency: f1=2.1GHz, f2=2.101GHz
Bias: Vds=6V, Ids=80mA
Source Matching: Mag 0.71 Ang 131.9°
Load Matching: Mag 0.35 Ang 90.9°
[Note] P_out and η _add are measured by one signal.
The data for the figures above were measured with the load impedance matched to IP3.
Pin
Pout
Gain
IM3 IM3/Pout
IP3
Id
ηadd
Id=100mA _(dBm)
(dBm)
(dB)
(dBm)
(dBc)
(dBm)
(mA)
(%)
-15.0
0.3
15.3
-73.7
-74.0
37.3
98.1
0.2
-10.0
5.7
15.7
-65.9
-71.7
41.6
96.4
0.6
-5.0
10.8
15.8
-61.4
-72.2
46.8
93.6
2.1
0.0
15.8
15.8
-28.2
-44.0
37.8
88.6
7.0
5.0
20.9
15.9
0.2
-20.7
29.9
85.9
23.2
10.0
24.6
14.6
16.1
-8.5
23.6
93.7
49.0
15.0
25.6
10.6
20.6
-5.0
21.5
105.7
52.5
Pin
Pout
Gain
IM3 IM3/Pout
IP3
Id
ηadd
Id=80mA
(dBm)
(dBm)
(dB)
(dBm)
(dBc)
(dBm)
(mA)
(%)
-15.0
0.2
15.2
-76.1
-76.3
38.3
78.5
0.2
-10.0
5.6
15.6
-66.9
-72.5
42.0
76.8
0.8
-5.0
10.7
15.7
-50.5
-61.2
41.0
74.1
2.6
0.0
15.8
15.8
-24.1
-39.8
35.4
69.5
8.8
5.0
21.1
16.1
4.1
-17.0
27.7
70.5
29.4
10.0
24.1
14.1
17.5
-6.7
21.3
80.4
51.6
15.0
25.0
10.0
19.8
-5.2
21.0
90.0
52.2
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: [phone] Fax: [phone] e-mail : [e-mail] Web Site: www.sei.co.jp/GaAsIC/
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