P0120002P Datasheet, PDF (6/13 Pages) Eudyna Devices Inc – 250mW GaAs Power FET (Pb-Free Type)

P0120002P
Technical Note
250mW GaAs Power FET (Pb-Free Type) SUMITOMO ELECTRIC
♦NF Characteristics
Ids=100mA
Ids=80mA
Ids=60mA
1.60
-0.2
-0.4
2.10
3.0
4.0
5.0
10.0
1.48
-0.2
-0.4
1.98
3.0
4.0
5.0
10.0
1.40
-0.2
-0.4
1.90
3.0
4.0
5.0
10.0
[Note] The data for Smith charts were measured at frequency of 2GHz and Tc of 25°C.
Freq.
(GHz)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
NFmin
(dB)
0.54
0.47
0.73
0.78
0.93
0.96
1.03
1.13
1.60
Γop t
M ag Ang(deg)
0.67 -94.6
0.64 -59.3
0.51 -29.0
0.52
9.7
0.48
44.0
0.52
77.5
0.52 108.6
0.53 138.0
0.39 170.7
Vds=6V
Rn/50
0.16
0.24
0.30
0.35
0.29
0.25
0.18
0.10
0.10
Ids=100mA
Associated
Gain(dB)
23.9
22.4
20.5
19.9
18.9
18.3
17.6
17.1
16.2
Freq.
(GHz)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
NFmin
(dB)
0.49
0.41
0.61
0.66
0.82
0.83
0.90
1.00
1.40
Γop t
M ag Ang(deg)
0.66 -98.1
0.62 -64.3
0.51 -34.7
0.50
3.7
0.45
36.6
0.49
70.5
0.49 101.8
0.50 130.9
0.35 163.0
Vds=6V
Rn/50
0.12
0.18
0.23
0.28
0.23
0.22
0.15
0.10
0.10
Ids=60mA
Associated
Gain(dB)
23.2
21.7
19.9
19.3
18.3
17.7
17.1
16.5
15.6
Vds=6V Ids=80mA
Freq. NFmin
Γop t
Associated
Rn/50
(GHz) (dB) M ag Ang(deg)
Gain(dB)
2.0
1.8
0.4 0.51
0.7
-96.60 0.14
23.5
1.6
0.6 0.44
0.6
-61.70 0.21
22.1
1.4
0.8 0.67
0.5
-32.00 0.27
20.2
1.2
1.0 0.71
0.5
7.60
0.33
19.7
1.0
1.2 0.87
0.5
40.50 0.29
18.6
0.8
1.4 0.89
0.5
74.20 0.23
18.0
1.6 0.96
0.5
105.70 0.17
17.4
0.6
1.8 1.07
0.5
134.70 0.10
16.8
0.4
2.0 1.48
0.4
167.40 0.10
15.9
0.2
0.0
0
Ids=100mA
Ids=80mA
Ids=60mA
0.5
1.0
1.5
Frequency (GHz)
2.0
2.5
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: [phone] Fax: [phone] e-mail : [e-mail] Web Site: www.sei.co.jp/GaAsIC/
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