P0120002P Datasheet, PDF (3/13 Pages) Eudyna Devices Inc – 250mW GaAs Power FET (Pb-Free Type)

P0120002P
250mW GaAs Power FET (Pb-Free Type)
Tc=25°C, Vds=6V, Ids=80mA, Common Source, Zo=50Ω (Calibrated to device leads)
Technical Note
SUMITOMO ELECTRIC
2.4GHz
-0.2
S11
-0.4
3.0
4.0
5.0
10.0
2.4GHz
1.2GHz
S22
1.2GHz
1.2GHz
135
Scale for |S12|
-180
6.0
45
S21
4.0
2.4GHz
2.0 _1.2GHz
S12
0
2. 4GH z 0
0 0.02 0.04 0.06
-45
-135
Ids=100mA Freq(GHz) S11 M ag
1.2
0.861
1.4
0.842
1.6
0.830
1.8
0.820
2.0
0.810
2.2
0.801
2.4
0.789
S11 Ang
-102.8
-117.4
-130.3
-141.7
-152.1
-161.6
-171.1
S21 M ag
6.088
5.659
5.264
4.892
4.592
4.350
4.139
S21 Ang
107.4
97.5
88.5
80.2
72.4
64.8
57.3
S12 M ag
0.037
0.039
0.041
0.043
0.044
0.046
0.048
S12 Ang
37.7
31.5
25.8
20.7
16.2
11.5
6.4
S22 M ag
0.463
0.442
0.423
0.412
0.398
0.380
0.360
S22 Ang
-40.9
-45.9
-50.0
-53.4
-58.1
-62.1
-66.0
Ids=80mA
Freq(GHz) S11 M ag
1.2
0.861
1.4
0.843
1.6
0.830
1.8
0.820
2.0
0.809
2.2
0.800
2.4
0.788
S11 Ang
-102.2
-116.7
-129.6
-141.1
-151.5
-161.0
-170.5
S21 M ag
6.066
5.645
5.256
4.885
4.589
4.347
4.138
S21 Ang
107.7
97.8
88.7
80.4
72.6
65.0
57.6
S12 M ag
0.039
0.042
0.044
0.046
0.047
0.049
0.051
S12 Ang
37.2
30.5
24.7
19.5
14.7
9.9
4.8
S22 M ag
0.462
0.440
0.419
0.407
0.392
0.374
0.352
S22 Ang
-41.9
-47.0
-51.2
-54.7
-59.4
-63.3
-67.2
[Note] You can download the S-parameter list from our web site: www.sei.co.jp/GaAsIC/
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: [phone] Fax: [phone] e-mail : [e-mail] Web Site: www.sei.co.jp/GaAsIC/
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