P0120002P Datasheet, PDF (5/13 Pages) Eudyna Devices Inc – 250mW GaAs Power FET (Pb-Free Type)

P0120002P
250mW GaAs Power FET (Pb-Free Type)
Tc=25°C, Vds=6V, Ids=100mA, Pin=-5dBm
Technical Note
SUMITOMO ELECTRIC
[Pout -Ls tate ]
f = 2.1GHz
Γ_pout : 0.73∠ 85.8
Source : 0.79 ∠ 160.5
Pout max : 15.75dBm
+j25
+j50
15.5
15.75
15.25
15.0
14.75
14.5
+j100
25Ω
50Ω
100Ω
[ IP3 - Ls ta te]
f1 = 2.1GHz
f2 = 2.101GHz
+j25
Γ_IP3 : 0.27∠ 87.0
Source : 0.71∠ 131.9
IP3 max : 45.75d Bm
+j50
+j100
25Ω
40.75
45.75
44.7543.75
42.75
41.75
50Ω
100Ω
-j25
-j50
-j100
Tc= 25°C, Vds=6V, Ids=80mA , Pin=-5d Bm
[Pout -Ls tate ]
f = 2.1GHz
+j25
Γ_pout : 0.74∠ 89.0
Source : 0.79∠ 160.5
Pout max : 16.05dBm
+j50
16.05
15.8
15.55
15.05 ^15.3
14.8
+j100
25Ω
50Ω
100Ω
-j25
-j50
-j100
[ IP3 - Ls ta te]
f1 = 2.1GHz
f2 = 2.101GHz
+j25
Γ_IP3 : 0.35∠ 90.9
Source : 0.71∠ 131.9
IP3 max : 40.95d Bm
+j50
+j100
25Ω
38.45
40.45
40.95
39.95
39.45
38.95
50Ω
100Ω
-j25
-j50
-j100
-j25
-j50
-j100
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: [phone] Fax: [phone] e-mail : [e-mail] Web Site: www.sei.co.jp/GaAsIC/
-5-