SEG04G72B1BC2MT-30R Datasheet, PDF (8/16 Pages) List of Unclassifed Manufacturers – 4GB DDR2 . SDRAM registered SO-RDIMM

preliminary Data Sheet
Rev.0.9 07.01.2013
Parameter
& Test Condition
Symbol
max.
Unit
5300-555
OPERATING WRITE CURRENT:
All device banks open, Continuous burst writes; One module
rank active; BL = 4, CL = CL (I_DD), AL = 0;
t_CK = t_CK (I_DD), t_RAS = t_RAS MAX (I_DD), t_RP = t_RP (I_DD);
CKE is HIGH, CS# is HIGH between valid commands; Address
bus inputs are changing once every two clock cycles; DQ inputs
changing once per clock cycle
BURST REFRESH CURRENT:
t_CK = t_CK (I_DD); refresh command at every t_RFC (I_DD) interval, CKE
is HIGH, CS# is HIGH between valid commands; All other
Control and Address bus inputs are changing once every two
clock cycles; DQ inputs changing once per clock cycle
SELF REFRESH CURRENT:
CK and CK# at 0V; CKE ≤ 0.2V; All other Control and Address
bus inputs are floating at V_REF; DQ’s are floating at V_REF
OPERATING CURRENT*) :
Four device bank interleaving READs, I_OUT = 0mA; BL = 4, CL = CL
(I_DD), AL = t_RCD (I_DD) – 1 x t_CK (I_DD); t_CK = t_CK (I_DD), t_RC = t_RC (I_DD),
t_RRD = t_RRD (I_DD), t_RCD = t_RCD (I_DD);
CKE is HIGH, CS# is HIGH between valid commands; Address
bus inputs are not changing during DESELECT; DQ inputs
changing once per clock cycle
I_DD4W
I_DD5
I_DD6
I_DD7
976
mA
2400
mA
192
mA
1536
mA
*) Value calculated as one module rank in this operating condition, and all other module ranks in IDD2P (CKE
LOW) mode.
TIMING VALUES USED FOR I_DD MEASUREMENT
SYMBOL
CL (IDD)
t_RCD (IDD)
t_RC (IDD)
t_RRD (IDD)
t_CK (IDD)
t_RAS MIN (IDD)
t_RAS MAX (IDD)
t_RP (IDD)
t_RFC (IDD)
IDD MEASUREMENT CONDITIONS
5300-555
5
15
60
7.5
3.0
45
70’000
15
105
Unit
t_CK
ns
ns
ns
ns
ns
ns
ns
ns
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