SEG04G72B1BC2MT-30R Datasheet, PDF (10/16 Pages) List of Unclassifed Manufacturers – 4GB DDR2 . SDRAM registered SO-RDIMM

preliminary Data Sheet
Rev.0.9 07.01.2013
DDR2 SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND RECOMMENDED
AC OPERATING CONDITIONS (Continued)
(0°C ≤ TCASE ≤ + 85°C; VDDQ = +1.8V ± 0.1V, VDD = +1.8V ± 0.1V)
AC CHARACTERISTICS
PARAMETER
SYMBOL
Address and control input hold t_IH
time
CAS# to CAS# command delay t_CCD
ACTIVE to ACTIVE (same bank) t_RC
command period
ACTIVE bank a to ACTIVE bank t_RRD
b command
ACTIVE to READ or WRITE
t_RCD
delay
Four bank Activate period
t_FAW
ACTIVE to PRECHARGE
t_RAS
command
Internal READ to precharge
t_RTP
command delay
Write recovery time
t_WR
Auto precharge write recovery + t_DAL
precharge time
Internal WRITE to READ
command delay
t_WTR
PRECHARGE command period t_RP
PRECHARGE ALL command t_RPA
period
LOAD MODE command cycle
time
t_MRD
CKE low to CK, CK# uncertainty t_DELAY
REFRESH to ACTIVE or
t_RFC
REFRESH to REFRESH
command interval
Average periodic refresh interval t_REFI
(0°C<= T_CASE <= 85 °C)
(85°C<= T_CASE <= 95 °C)
t_{REFI (IT)}
Exit SELF REFRESH to non-
READ command
t_XSNR
Exit SELF REFRESH to READ t_XSRD
command
Exit SELF REFRESH timing
reference
t_ISXR
ODT turn-on delay
t_AOND
ODT turn-on
t_AON
ODT turn-off delay
ODT turn-off
t_AOFD
t_AOF
ODT turn-on (power-down
mode)
t_AONPD
ODT turn-off (power-down
mode)
t_AOFPD
ODT to power-down entry
latency
t_ANPD
5300-555
MIN
MAX Unit
0.4
ns
2
tCK
55
ns
7.5
ns
15
ns
37.5
ns
40
70’000 ns
7.5
ns
15
ns
tWR + tRP
ns
7.5
ns
15
ns
tRP + tCK
ns
2
tCK
tIS + tCK + tIH
tCK
195 70’000 ns
7.8
µs
3.9
tRFC(min)
ns
+ 10
200
tCK
tIS
ps
2
2
tCK
tAC(min) tAC(max) _ps
+ 1,000
2.5
2.5
tCK
tAC(min) tAC(max) _ps
+ 600
tAC(min) + 2 x tCK + _ps
2,000 tAC(max)
+ 1,000
tAC(min) + 2.5 x tCK + _ps
2,000 tAC(max)
+ 1,000
3
tCK
Swissbit
Industriestrasse 4
CH-9552 Bronschhofen
Switzerland
Fon: [phone]
Fax: [phone]
www.swissbit.com
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