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SEG04G72B1BC2MT-30R Datasheet, PDF (7/16 Pages) List of Unclassifed Manufacturers – 4GB DDR2 . SDRAM registered SO-RDIMM
preliminary Data Sheet
Rev.0.9 07.01.2013
IDD Specifications and Conditions
(0°C ≤ TCASE ≤ + 85°C; VDDQ = +1.8V ± 0.1V, VDD = +1.8V ± 0.1V)
Parameter
& Test Condition
OPERATING CURRENT *) :
One device bank Active-Precharge;
tRC= tRC (IDD); tCK = tCK (IDD); CKE is HIGH, CS# is HIGH
between valid commands;
DQ inputs changing once per clock cycle; Address and control
inputs changing once every two clock cycles
OPERATING CURRENT *) :
One device bank; Active-Read-Precharge;
IOUT = 0mA; BL = 4, CL = CL (IDD), AL = 0;
tCK = tCK (IDD), tRC= tRC (IDD), tRAS = tRAS MIN (IDD),
tRCD = tRCD (IDD); CKE is HIGH, CS# is HIGH between valid
commands; Address inputs changing once every two clock
cycles; Data Pattern is same as IDD4W
PRECHARGE POWER-DOWN CURRENT:
All device banks idle; Power-down mode;
tCK = tCK (IDD); CKE is LOW; All Control and Address bus inputs
are not changing; DQ’s are floating at VREF
PRECHARGE QUIET STANDBY CURRENT:
All device banks idle;
tCK = tCK (IDD); CKE is HIGH, CS# is HIGH;
All Control and Address bus inputs are not changing; DQ’s are
floating at VREF
PRECHARGE STANDBY CURRENT:
All device banks idle;
tCK = tCK (IDD); CKE is HIGH, CS# is HIGH;
All other Control and Address bus inputs are changing once
every two clock cycles; DQ inputs changing once per clock
cycle
ACTIVE POWER-DOWN
CURRENT:
Fast PDN Exit
MR[12] = 0
All device banks open; tCK = tCK
(IDD); CKE is LOW; All Control and
Slow PDN Exit
MR[12] = 1
Address bus inputs are not
changing; DQ’s are floating at
VREF
ACTIVE STANDBY CURRENT:
All device banks open; tCK = tCK (IDD),
tRAS = tRAS MAX (IDD), tRP = tRP (IDD);
CKE is HIGH, CS# is HIGH between valid commands;
All other Control and Address bus inputs are changing once
every two clock cycles; DQ inputs changing once per clock
cycle
OPERATING READ CURRENT:
All device banks open, Continuous burst reads; One module
rank active; IOUT = 0mA; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK
(IDD), tRAS = tRAS MAX (IDD), tRP = tRP (IDD); CKE is HIGH, CS# is
HIGH between valid commands; Address bus inputs are
changing once every two clock cycles; DQ inputs changing
once per clock cycle
Symbol
IDD0
IDD1
IDD2P
IDD2Q
IDD2N
IDD3P
IDD3N
IDD4R
max.
5300-555
648
Unit
mA
696
mA
192
mA
672
mA
736
mA
256
mA
256
800
mA
1055
mA
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