EPC1064V Datasheet, PDF (30/36 Pages) List of Unclassifed Manufacturers – Configuration Devices for SRAM-Based LUT Devices

Configuration Devices for SRAM-based LUT Devices Data Sheet
f For EPC4, EPC8, and EPC16 device operating conditions, refer to the
Enhanced Configuration Devices (EPC4, EPC8, & EPC16) Data Sheet.
Table 12. Absolute Maximum Ratings
Symbol
Parameter
V_CC
V_I
I_MAX
I_OUT
P_D
T_STG
T_AMB
T_J
Supply voltage
DC input voltage
DC V_CC or ground current
DC output current, per pin
Power dissipation
Storage temperature
Ambient temperature
Junction temperature
Note (1)
Conditions
With respect to ground (2)
With respect to ground (2)
No bias
Under bias
Under bias
Min
Max Unit
–2.0
7.0
V
–2.0
7.0
V
50
mA
–25
25
mA
250
mW
–65
150
°C
–65
135
°C
135
°C
Table 13. Recommended Operating Conditions
Symbol
Parameter
V_CC
Supply voltage for 5.0-V operation
Supply voltage for 3.3-V operation
V_I
Input voltage
Conditions
(3), (4)
(3), (4)
With respect to ground
V_O
Output voltage
T_A
Operating temperature
t_R
Input rise time
t_F
Input fall time
For commercial use
For industrial use
Min
Max Unit
4.75 (4.50) 5.25 (5.50) V
3.0 (3.0) 3.6 (3.6) V
–0.3
V_CC + 0.3 V
(5)
0
V _CC
V
0
70
°C
–40
85
°C
20
ns
20
ns
Table 14. DC Operating Conditions
Symbol
Parameter
V_IH
High-level input voltage
Conditions
V_IL
Low-level input voltage
V_OH
5.0-V mode high-level TTL output voltage I_OH = –4 mA DC (6)
3.3-V mode high-level CMOS output
voltage
I_OH = –0.1 mA DC (6)
V_OL
Low-level output voltage
I_I
Input leakage current
I_OZ
Tri-state output off-state current
I_OL = 4 mA DC (6)
V_I = V_CC or ground
V_O = V_CC or ground
Min
Max Unit
2.0
V_CC + 0.3 V
(5)
–0.3
0.8
V
2.4
V
V_CC – 0.2
V
0.4
V
–10
10
µA
–10
10
µA
30
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