NT5DS32M8AT Datasheet, PDF (23/27 Pages) List of Unclassifed Manufacturers – 256Mb DDR333/300 SDRAM

NT5DS64M4AT NT5DS64M4AW
NT5DS32M8AT NT5DS32M8AW
256Mb DDR333/300 SDRAM
Electrical Characteristics & AC Timing - Absolute Specifications
(0 °C ≤ T_A ≤ 70 °C; V_DDQ = 2.5V ± 0.2V; V_DD = 2.5V ± 0.2V, See AC Characteristics) (Part 2 of 2)
Symbol
Parameter
t_RC Active to Active/Auto-refresh command period
t_RFC
Auto-refresh to Active/Auto-refresh
command period
DDR333
(-6)
Min
Max
60
72
DDR300
(-66)
Min
Max
65
75
t_RCD
t_RAP
t_RP
t_RRD
t_WR
t_DAL
Active to Read or Write delay
Active to Read Command with Autoprecharge
Precharge command period
Active bank A to Active bank B command
Write recovery time
Auto precharge write recovery
+ precharge time
t_WTR
t_XSNR
t_XSRD
t_REFI
Internal write to read command delay
Exit self-refresh to non-read command
Exit self-refresh to read command
Average Periodic Refresh Interval
18
20
18
20
18
20
12
15
15
15
(t_WR/t_CK)
+
(t_RP/t_CK)
1
(t_WR/t_CK)
+
(t_RP/t_CK)
1
75
75
200
200
7.8
7.8
Unit Notes
ns
1-4
ns
1-4
ns
1-4
ns
1-4
ns
1-4
ns
1-4
ns
1-4
t_CK
1-4,13
t_CK
1-4
ns
1-4
t_CK
1-4
µs
1-4, 8
Preliminary
10/01
23
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