NT5DS32M8AT Datasheet, PDF (18/27 Pages) List of Unclassifed Manufacturers – 256Mb DDR333/300 SDRAM

NT5DS64M4AT NT5DS64M4AW
NT5DS32M8AT NT5DS32M8AW
256Mb DDR333/300 SDRAM
DC Electrical Characteristics and Operating Conditions
(0°C ≤ T_A ≤ 70°C; V_DDQ = 2.5V ± 0.2V, V_DD = + 2.5V ± 0.2V, see AC Characteristics)
Symbol
I_OHW
I_OLW
Parameter
Output Current: Half- Strength Driver
High current (V_OUT= V_DDQ -0.763V, min V_REF, min V_TT)
Low current (V_OUT= 0.763V, max V_REF, max V_TT)
Min
− 9.0
9.0
Max
Units
Notes
mA
1
1. Inputs are not recognized as valid until V_REF stabilizes.
2. V_REF is expected to be equal to 0.5 V_DDQ of the transmitting device, and to track variations in the DC level of the same. Peak-to-peak
noise on V_REF may not exceed ± 2% of the DC value.
3. V_TT is not applied directly to the device. V_TT is a system supply for signal termination resistors, is expected to be set equal to V_REF, and
must track variations in tHalf-he DC level of V_REF.
4. V_ID is the magnitude of the difference between the input level on CK and the input level on CK.
5. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire tempera-ture and
voltage range, for device drain to source voltages for 0.25 volts to 1.0 volts. For a given output, it represents the maximum difference
between pullup and pulldown drivers due to process variation.
Preliminary
10/01
18
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