M13S64164A_09 Datasheet, PDF (5/48 Pages) Elite Semiconductor Memory Technology Inc. – 1M x 16 Bit x 4 Banks Double Data Rate SDRAM

ESMT
M13S64164A
DC Specifications
Parameter
Symbol
Test Condition
Operation Current
(One Bank Active)
Operation Current
(One Bank Active)
Precharge Power-down
Standby Current
IDD0
IDD1
IDD2P
t_RC = t_RC (min), t_CK = t_CK (min),
Active – Precharge
Burst Length = 2, t_RC = t_RC (min),
CL= 2.5, I_OUT = 0mA,
Active-Read-Precharge
CKE ≤ V_IL(max), t_CK = t_CK (min),
All banks idle
Idle Standby Current
Active Power-down Standby
Current
Active Standby Current
Operation Current (Read)
Operation Current (Write)
Auto Refresh Current
Self Refresh Current
Operation Current
(4 bank interleaving)
IDD2N
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
IDD7
CKE ≥ V_IH(min), CS ≥ V_IH(min),
t_CK = t_CK (min)
All banks ACT, CKE ≤ V_IL(max),
t_CK = t_CK (min)
One bank; Active-Precharge,
t_RC = t_RAS(max), t_CK = t_CK (min)
Burst Length = 2, CL= 2.5 ,
t_CK = t_CK (min), I_OUT = 0mA
Burst Length = 2, CL= 2.5 ,
t_CK = t_CK (min)
t_RC ≥ t_RFC(min)
CKE ≤ 0.2V
Burst Length = 4, t_RC = t_RC (min),
I_OUT = 0mA
Note: 1. Enable on-chip refresh and address counters.
Version
-5
-6
110
100
Unit Note
mA
130
110
mA
10
10
mA
70
70
mA
20
15
mA
90
80
mA
180
160
mA
180
160
mA
140
120
mA
5
5
mA 1
235
215
mA
AC Operation Conditions & Timing Specification
AC Operation Conditions
Parameter
Symbol
Min
Max
Unit
Note
Input High (Logic 1) Voltage, DQ, DQS and DM signals
V_IH(AC) V_REF + 0.31
V
Input Low (Logic 0) Voltage, DQ, DQS and DM signals
V_IL(AC)
V_REF - 0.31
V
Input Different Voltage, CLK and CLK inputs
V_ID(AC)
0.7
V_DDQ+0.6
V
1
Input Crossing Point Voltage, CLK and CLK inputs
V_IX(AC) 0.5*V_DDQ-0.2 0.5*V_DDQ+0.2
V
2
Note1. V_ID is the magnitude of the difference between the input level on CLK and the input on CLK .
2. The value of V_IX is expected to equal 0.5*V_DDQ of the transmitting device and must track variations in the DC level of the
same.
Input / Output Capacitance
(V_DD = 2.3V~2.7V, V_DDQ=2.3V~2.7V, T_A = 25 °C , f = 1MHz)
Parameter
Input capacitance
(A0~A11, BA0~BA1, CKE, CS , RAS , CAS , WE )
Symbol
C_IN1
Min
Max
Unit
2.5
3.5
pF
Input capacitance (CLK, CLK )
Data & DQS input/output capacitance
Input capacitance (DM)
C_IN2
C_OUT
C_IN3
2.5
3.5
pF
4.0
5.5
pF
4.0
5.5
pF
Elite Semiconductor Memory Technology Inc.
Publication Date : Jun. 2009
Revision : 1.4
5/48