M13S64164A_09 Datasheet, PDF(35/48 Page) Elite Semiconductor Memory Technology Inc. – 1M x 16 Bit x 4 Banks Double Data Rate SDRAM

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M13S64164A_09 Datasheet, PDF (35/48 Pages) Elite Semiconductor Memory Technology Inc. – 1M x 16 Bit x 4 Banks Double Data Rate SDRAM

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ESMT

Write with Auto Precharge (@ BL=8)

M13S64164A

Note: 1. The row active command of the precharge bank can be issued after tRP from this point.

The new read/write command of another activated bank can be issued from this point.

At burst read/write with auto precharge, CAS interrupt of the same/another bank is illegal.

Elite Semiconductor Memory Technology Inc.

Publication Date : Jun. 2009

Revision : 1.4

35/48

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