M12L128168A_09 Datasheet, PDF (27/45 Pages) Elite Semiconductor Memory Technology Inc. – 2M x 16 Bit x 4 Banks Synchronous DRAM

ESMT
M12L128168A
Single Bit Read-Write-Read Cycle(Same Page) @ CAS Latency = 3,Burst Length = 1
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 2.3
27/45