M12L128168A_09 Datasheet, PDF (18/45 Pages) Elite Semiconductor Memory Technology Inc. – 2M x 16 Bit x 4 Banks Synchronous DRAM

ESMT
4. CAS Interrupt (II) : Read Interrupted by Write & DQM
( a) CL =2 , B L= 4
CLK
i)CMD
DQM
DQ
ii)CMD
DQM
DQ
iii)CMD
DQM
DQ
iv)CMD
DQM
DQ
RD WR
D0 D1 D2 D3
RD
WR
Hi-Z
D0 D1 D2 D3
RD
WR
Hi-Z
D0 D1 D2 D3
RD
WR
HHi -i -ZZ
Q0
D0 D1 D2 D3
*Note1
M12L128168A
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 2.3
18/45