EN29LV040A_11 Datasheet, PDF (23/33 Pages) Eon Silicon Solution Inc. – 4 Megabit (512K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory

Table 11. ERASE AND PROGRAMMING PERFORMANCE
EN29LV040A
Parameter
Sector Erase Time
Chip Erase Time
Limits
Typ
Max
Unit
Comments
0.5
10
sec
Excludes 00H programming prior
to erasure
4
80
sec
Byte Programming Time
8
Chip Programming Time
Erase/Program Endurance
4.2
100K
300
µs
Excludes system level overhead
12.6
sec
cycles
Minimum 100K cycles
Table 12. DATA RETENTION
Parameter Description
Data Retention Time
Test Conditions
Min
150°C
10
125°C
20
Unit
Years
Years
Table 13. TSOP PIN CAPACITANCE @ 25°C, 1.0MHz
Parameter Symbol
C_IN
C_OUT
C_IN2
Parameter Description
Input Capacitance
Output Capacitance
Control Pin Capacitance
Test Setup
V_IN = 0
V_OUT = 0
V_IN = 0
Typ
Max
6
7.5
8.5
12
7.5
9
Unit
pF
pF
pF
Table 14. 32-PIN PLCC PIN CAPACITANCE @ 25°C, 1.0MHz
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C_IN
Input Capacitance
V_IN = 0
4
6
pF
C_OUT
Output Capacitance
V_OUT = 0
8
12
pF
C_IN2
Control Pin Capacitance
V_IN = 0
8
12
pF
This Data Sheet may be revised by subsequent versions
23
or modifications due to changes in technical specifications.
© 2003 Eon Silicon Solution, Inc.,
Rev. E, Issue Date: 2011/10/27
www.eonssi.com