EN29LV040A_11 Datasheet, PDF (22/33 Pages) Eon Silicon Solution Inc. – 4 Megabit (512K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory

Table 10. AC CHARACTERISTICS
Write (Erase/Program) Operations
Alternate CE Controlled Writes
EN29LV040A
Parameter
Symbols
JEDEC Standard
t_AVAV t_WC
t_AVEL
t_AS
t_ELAX
t_AH
t_DVEH t_DS
t_EHDX t_DH
t_OES
Description
Write Cycle Time
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Output Enable Setup Time
Speed Options
-45R -55R -70
Unit
Min
45
55
70
ns
Min
0
0
0
ns
Min
35
45
45
ns
Min
20
25
30
ns
Min
0
0
0
ns
Min
0
0
0
ns
t_OEH
Output Enable ^Read
Min
0
0
0
Hold Time
Toggle and
Data Polling
Min
10
10
10
ns
ns
t_GHEL t_GHEL
Read Recovery Time before _Min
Write ( OE High to CE Low)
0
0
0
ns
t_WLEL t_WS
W E SetupTime
Min
0
0
0
ns
t_EHWH t_WH
W E Hold Time
Min
0
0
0
ns
t_ELEH
t_CP
Write Pulse Width
Min
25
30
35
ns
t_EHEL
t_CPH
Write Pulse Width High
Min
20
20
20
ns
t_WHWH1 t_WHWH1 Programming Operation
Typ
8
8
8
µs
Max
300
300
300
µs
t_WHWH2
t_WHWH2
t_VCS
Sector Erase Operation
Vcc Setup Time
Typ
0.5
0.5
0.5
s
Min
50
50
50
µs
t_VIDR
Rise Time to V_ID
Min
500
500
500
ns
This Data Sheet may be revised by subsequent versions
22
or modifications due to changes in technical specifications.
© 2003 Eon Silicon Solution, Inc.,
Rev. E, Issue Date: 2011/10/27
www.eonssi.com