EN29LV040A_11 Datasheet, PDF (18/33 Pages) Eon Silicon Solution Inc. – 4 Megabit (512K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory

Table 7. DC Characteristics
(T_a = 0°C to 70°C or - 40°C to 85°C; V_CC = 2.7-3.6V)
EN29LV040A
Symbol
Parameter
Test Conditions
I_LI
I_LO
I_CC1
I_CC2
I_CC3
I_CC4
Input Leakage Current
Output Leakage Current
Supply Current (read - CMOS)
Supply Current (Standby - CMOS)
Supply Current (Program or Erase)
Automatic Sleep Mode
0V≤ V_IN ≤ Vcc
0V≤ V_OUT ≤ Vcc
CE# = V_IL; OE# = V_IH;
f = 5MHz
CE# = Vcc ± 0.3V
Byte program, Sector or
Chip Erase in progress
V_IH = Vcc ± 0.3 V
V_IL = Vss ± 0.3 V
V_IL
Input Low Voltage
V_IH
V_OL
V_OH
V_ID
I_ID
V_LKO
Input High Voltage
Output Low Voltage
Output High Voltage CMOS
A9 Voltage (Electronic Signature)
A9 Current (Electronic Signature)
Supply voltage (Erase and
Program lock-out)
I_OL = 4.0 mA
I_OH = -100 μA,
A9 = V_ID
Min
-0.5
0.7 x
Vcc
Vcc -
0.4V
10.5
2.3
Typ ^{Max Unit}
±1
µA
±1
µA
7
12
mA
1
5.0
µA
15
30
mA
1
5.0
µA
0.8
V
Vcc +
0.3
V
0.45
V
V
11.5
V
100
µA
2.5
V
This Data Sheet may be revised by subsequent versions
18
or modifications due to changes in technical specifications.
© 2003 Eon Silicon Solution, Inc.,
Rev. E, Issue Date: 2011/10/27
www.eonssi.com