EN25D16 Datasheet, PDF (11/37 Pages) Eon Silicon Solution Inc. – 16 Megabit Serial Flash Memory

EN25D16
Release from Deep
(4)
Power-down, and
dummy
dummy dummy (ID7-ID0)
read Device ID
ABh
Release from Deep
Power-down
Manufacturer/
Device ID
90h
dummy
dummy _00h(5) (M7-M0) (ID7-ID0)
Read Identification 9Fh
(M7-M0)
(ID15-
ID8)
(ID7-
ID0)
Enter OTP mode
3Ah
Notes:
1. Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “( )” indicate data being read from
the device on the DO pin.
2. The Status Register contents will repeat continuously until CS# terminate the instruction.
3. All sectors may use any address within the sector.
4. The Device ID will repeat continuously until CS# terminate the instruction.
5. The Manufacturer ID and Device ID bytes will repeat continuously until CS# terminate the instruction.
00h on Byte 4 starts with MID and alternate with DID, 01h on Byte 4 starts with DID and alternate with MID.
Table 5. Manufacturer and Device Identification
OP Code
ABh
90h
9Fh
(M7-M0)
1Ch
1Ch
(ID15-ID0)
3015h
(ID7-ID0)
14h
14h
Write Enable (WREN) (06h)
The Write Enable (WREN) instruction (Figure 5) sets the Write Enable Latch (WEL) bit. The Write
Enable Latch (WEL) bit must be set prior to every Page Program (PP), Sector Erase (SE), Block
Erase (BE), Chip Erase (CE) and Write Status Register (WRSR) instruction.
The Write Enable (WREN) instruction is entered by driving Chip Select (CS#) Low, sending the
instruction code, and then driving Chip Select (CS#) High.
Figure 5. Write Enable Instruction Sequence Diagram
This Data Sheet may be revised by subsequent versions ₁₁ ©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. B, Issue Date: 2008/06/23