EN25D16 Datasheet, PDF (1/37 Pages) Eon Silicon Solution Inc. – 16 Megabit Serial Flash Memory

EN25D16
16 Megabit Serial Flash Memory
with 4Kbyte Uniform Sector and Dual Output
EN25D16
FEATURES
• Single power supply operation
- Full voltage range: 2.7-3.6 volt
• 16 Mbit Serial Flash
- 16 M-bit/2048 K-byte/8192 pages
- 256 bytes per programmable page
• High performance
- 75MHz clock rate
- Dual Output Fast Read instruction
• Low power consumption
- 5 mA typical active current
- 1 μA typical power down current
• Uniform Sector Architecture:
- 512 sectors of 4-Kbyte
- 32 blocks of 64-Kbyte
- Any sector or block can be
erased individually
• Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
• High performance program/erase speed
- Page program time: 1.5ms typical
- Sector erase time: 150ms typical
- Block erase time 800ms typical
- Chip erase time: 18 Seconds typical
• Lockable 512 byte OTP security sector
• Minimum 100K endurance cycle
• Package Options
- 8 pins SOP 200mil body width
- 8 contact VDFN
- 8 pins PDIP
- 16 pin SOP 300mil body width
- All Pb-free packages are RoHS compliant
• Industrial temperature Range
GENERAL DESCRIPTION
The EN25D16 is a 16M-bit (2048K-byte) Serial Flash memory, with advanced write protection
mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to
256 bytes at a time, using the Page Program instruction.
The EN25D16 is designed to allow either single Sector at a time or full chip erase operation. The
EN25D16 can be configured to protect part of the memory as the software protected mode. The
device can sustain a minimum of 100K program/erase cycles on each sector.
This Data Sheet may be revised by subsequent versions ₁
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. B, Issue Date: 2008/06/23