HB52RF649E1U-75B Datasheet, PDF (6/20 Pages) Elpida Memory – 512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC133 SDRAM

HB52RF649E1U-75B
Byte No. Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments
22
SDRAM device attributes:
General
0 0 0 0 1 1 1 0 0E
V_CC ± 10%
23
SDRAM cycle time
(2nd highest CE latency)
10 ns
1 0 1 0 0 0 0 0 A0
CL = 2
*⁵
24
SDRAM access from Clock
0 1 1 0 0 0 0 0 60
(2nd highest CE latency)
6 ns
25
SDRAM cycle time
(3rd highest CE latency)
Undefined
0 0 0 0 0 0 0 0 00
26
SDRAM access from Clock (3rd 0 0 0 0 0 0 0 0 00
highest CE latency)
Undefined
27
Minimum row precharge time 0 0 0 1 0 1 0 0 14
20 ns
28
Row active to row active min 0 0 0 0 1 1 1 1 0F
15 ns
29
RE to CE delay min
0 0 0 1 0 1 0 0 14
20 ns
30
Minimum RE pulse width
0 0 1 0 1 1 0 1 2D
45 ns
31
Density of each bank on module 1 0 0 0 0 0 0 0 80
1 bank
512M byte
32
Address and command signal 0 0 0 1 0 1 0 1 15
input setup time
1.5 ns*⁵
33
Address and command signal 0 0 0 0 1 0 0 0 08
input hold time
0.8 ns*⁵
34
Data signal input setup time
0 0 0 1 0 1 0 1 15
1.5 ns*⁵
35
Data signal input hold time
0 0 0 0 1 0 0 0 08
0.8 ns*⁵
36 to 61 Superset information
0 0 0 0 0 0 0 0 00
Future use
62
SPD data revision code
0 0 0 0 0 0 1 0 02
JEDEC2
63
Checksum for bytes 0 to 62
1 0 1 0 0 0 1 1 A3
163
64
Manufacturer’s JEDEC ID code 0 0 0 0 0 1 1 1 07
HITACHI
65 to 71 Manufacturer’s JEDEC ID code 0 0 0 0 0 0 0 0 00
72
Manufacturing location
× × × × × × × × ××
*² (ASCII-
8bit code)
73
Manufacturer’s part number
0 1 0 0 1 0 0 0 48
H
74
Manufacturer’s part number
0 1 0 0 0 0 1 0 42
B
75
Manufacturer’s part number
0 0 1 1 0 1 0 1 35
5
76
Manufacturer’s part number
0 0 1 1 0 0 1 0 32
2
Preliminary Data Sheet E0023H10
6