HB52RF649E1U-75B Datasheet, PDF (5/20 Pages) Elpida Memory – 512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC133 SDRAM

HB52RF649E1U-75B
Serial PD Matrix*¹
Byte No. Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments
0
Number of bytes used by
1 0 0 0 0 0 0 0 80
128
module manufacturer
1
Total SPD memory size
0 0 0 0 1 0 0 0 08
256 byte
2
Memory type
0 0 0 0 0 1 0 0 04
SDRAM
3
Number of row addresses bits 0 0 0 0 1 1 0 1 0D
13
4
Number of column addresses 0 0 0 0 1 0 1 1 0B
11
bits
5
Number of banks
0 0 0 0 0 0 0 1 01
1
6
Module data width
0 1 0 0 1 0 0 0 48
72 bit
7
Module data width (continued) 0 0 0 0 0 0 0 0 00
0 (+)
8
Module interface signal levels 0 0 0 0 0 0 0 1 01
LVTTL
9
SDRAM cycle time
(highest CE latency)
7.5 ns
0 1 1 1 0 1 0 1 75
CL = 3
10
SDRAM access from Clock
0 1 0 1 0 1 0 0 54
*⁵
(highest CE latency)
5.4 ns
11
Module configuration type
0 0 0 0 0 0 1 0 02
ECC
12
Refresh rate/type
1 0 0 0 0 0 1 0 82
Normal
(7.8125 µs)
Self refresh
13
SDRAM width
0 0 0 0 0 1 0 0 04
64M × 4
14
Error checking SDRAM width 0 0 0 0 0 1 0 0 04
×4
15
SDRAM device attributes:
0 0 0 0 0 0 0 1 01
minimum clock delay for back-to-
back random column addresses
1 CLK
16
SDRAM device attributes:
Burst lengths supported
0 0 0 0 1 1 1 1 0F
1, 2, 4, 8
17
SDRAM device attributes:
0 0 0 0 0 1 0 0 04
4
number of banks on SDRAM
device
18
SDRAM device attributes:
0 0 0 0 0 1 1 0 06
2/3
CE latency
19
SDRAM device attributes:
0 0 0 0 0 0 0 1 01
0
S latency
20
SDRAM device attributes:
0 0 0 0 0 0 0 1 01
0
W latency
21
SDRAM device attributes
0 0 0 1 0 1 1 0 16
Registered
Preliminary Data Sheet E0023H10
5