GD25D10 Datasheet, PDF (21/28 Pages) ELM Electronics – Uniform sector dual and quad serial flash

GD25D10BxIGx Uniform sector dual and quad serial flash
8. ELECTRICAL CHARACTERISTICS
http://www.elm-tech.com
8.1. Power-ON Timing
Table 3. Power-Up Timing and Write Inhibit Threshold
Symbol
Parameter
Min Max Unit
tVSL
tPUW
VWI
VCC(min) To CS# Low
Time Delay From VCC(min) To Write Instruction
Write Inhibit Voltage VCC(min)
10
us
1
10
ms
1
2.5
V
8.2. Initial Delivery State
The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH). The Status
Register contains 00H (all Status Register bits are 0).
8.3. Data Retention and Endurance
Parameter
Minimum Pattern Data Retention Time
Erase / Program Endurance
Test Condition
150°C
125°C
-40 to 85°C
Min
10
20
100K
Unit
Years
Years
Cycles
8.4. Latch Up Characteristics
Parameter
Input Voltage Respect To VSS On I/O Pins
VCC Current
Min
-1.0V
-100mA
Max
VCC+1.0V
100mA
28 - 21
Rev.1.0