GP250MHB06S Datasheet, PDF (8/10 Pages) Dynex Semiconductor – Half Bridge IGBT Module

GP250MHB06S
1000
100
Diode
Transistor
10
1
0.001
0.01
0.1
1
10
Pulse width, t_p - (s)
Fig.15 Transient thermal impedance
8/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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