GP250MHB06S Datasheet, PDF (6/10 Pages) Dynex Semiconductor – Half Bridge IGBT Module

GP250MHB06S
40
Tj = 25˚C
35
V_GE = ±15V
V_CE = 300V
30
25
A
B
20
C
15
10
5
A: Rg = 15Ω
B: R_g = 10Ω
C: R_g = 5Ω
0
0
50
100 150 200 250 300
Collector current, I_C - (A)
Fig.7 Typical turn-off energy vs collector current
40
Tj = 125˚C
35
V_GE = ±15V
VCE = 300V
A
B
30
C
25
20
15
10
5
A: Rg = 15Ω
B: Rg = 10Ω
C: R_g = 5Ω
0
0
50
100 150 200 250 300
Collector current, I_C - (A)
Fig.8 Typical turn-off energy vs collector current
5
Tj = 25˚C
V_GE = ±15V
V_CE = 300V
4
3
2
1
R_g = 5Ω
Rg = 10Ω
Rg = 15Ω
5
Tj = 125˚C
V_GE = ±15V
V_CE = 300V
4
3
2
1
Rg = 5Ω
Rg = 10Ω
Rg = 15Ω
0
0
50 100 150 200 250 300
Collector current, I_C - (A)
Fig.9 Typical diode turn-off energy vs collector current
0
0
50 100 150 200 250 300
Collector current, I_C - (A)
Fig.10 Typical diode turn-off energy vs collector current
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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