GP250MHB06S Datasheet, PDF (4/10 Pages) Dynex Semiconductor – Half Bridge IGBT Module

GP250MHB06S
INDUCTIVE SWITCHING CHARACTERISTICS
T_j = 25˚C unless stated otherwise
Symbol
Parameter
t_d(off)
Turn-off delay time
t_f
Fall time
E_OFF
Turn-off energy loss
t_d(on)
Turn-on delay time
t_r
Rise time
E_ON
Turn-on energy loss
t_rr
Diode reverse recovery time
Q_rr
Diode reverse recovery charge
T_j = 125˚C unless stated otherwise.
t_d(off)
Turn-off delay time
t
Fall time
f
E_OFF
Turn-off energy loss
t_d(on)
Turn-on delay time
t_r
Rise time
E
Turn-on energy loss
ON
t_rr
Diode reverse recovery time
Q_rr
Diode reverse recovery charge
Conditions
Min. Typ. Max. Units
-
810
-
ns
I_C = 250A
V_GE = ±15V
V_CE = 50% V_CES
R
G(ON)
=
R
G(OFF)
=
5Ω
L ~ 100nH
-
310
-
ns
-
20
-
mJ
-
330
-
ns
-
130
-
ns
-
12
-
mJ
I_F = 250A
-
165
-
ns
V_R = 50%V_CES, dI_F/dt = 1500A/µs
-
15
-
µC
- 1050 -
ns
I_C = 250A
V_GE = ±15V
V_CE = 50% V_CES
R
G(ON)
=
R
G(OFF)
=
5Ω
L ~ 200nH
-
450
-
ns
-
30
-
mJ
-
380
-
ns
-
160
-
ns
-
18
-
mJ
I_F = 250A
-
230
-
ns
V_R = 50%V_CES, dI_F/dt = 1500A/µs
-
23
-
µC
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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