GP250MHB06S Datasheet, PDF (5/10 Pages) Dynex Semiconductor – Half Bridge IGBT Module

GP250MHB06S
TYPICAL CHARACTERISTICS
500
Common emitter
450 T_case = 25˚C
400
V_ge = 20/15V
V_ge = 12V
350
300
250
200
V_ge = 10V
150
100
50
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5
Collector-emitter voltage, V_ce - (V)
Fig.3 Typical output characteristics
500
Common emitter
450 T_case = 125˚C
400
V_ge = 20/15V
V_ge = 12V
350
300
250
200
V_ge = 10V
150
100
50
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5
Collector-emitter voltage, V_ce - (V)
Fig.4 Typical output characteristics
30.0
T_j = 25˚C
27.5 _{VGE = ±15V}
25.0 ^{VCE = 300V}
A
22.5
20.0
B
17.5
15.0
12.5
C
10.0
7.5
5.0
A: R_g = 15Ω
2.5
B: R_g = 10Ω
C: R_g = 5Ω
0
0
50
100 150 200 250 300
Collector current, I_C - (A)
Fig.5 Typical turn-on energy vs collector current
30.0
T_j = 125˚C
27.5 _{VGE = ±15V}
A
25.0 ^{VCE = 300V}
22.5
B
20.0
17.5
C
15.0
12.5
10.0
7.5
5.0
A: R_g = 15Ω
2.5
B: R_g = 10Ω
C: R_g = 5Ω
0
0
50
100 150 200 250 300
Collector current, I_C - (A)
Fig.6 Typical turn-on energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
www.dynexsemi.com